GAN SEMICONDUCTOR DEVICES MARKET TO REACH VALUATION OF ~US$ 4 BN BY 2027
GaN Semiconductor Devices Market: Introduction
Transparency Market Research delivers key insights on the
global GaN
semiconductor devices market. In terms of revenue, the global GaN
semiconductor devices market is estimated to expand at a CAGR of 14.5% during
the forecast period, owing to numerous factors, regarding which TMR offers
thorough insights and forecasts in its report on the global GaN semiconductor
devices market.
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Gallium nitride (GaN), a wide band gap semiconductor
material, is a newer technology compared to other semiconductor materials, such
as gallium arsenide (GaAs) and silicon carbide (SiC). GaN semiconductor devices
offer a competitive advantage in terms of thermal performance, efficiency,
weight, and size. GaN is the next-generation power semiconductor and hence,
different countries are involved in developing widespread applications of GaN
semiconductors. The wide band gap (WBG) semiconductor technology has matured
rapidly over the last few years. Based on product, the global GaN semiconductor
devices market has been classified into power semiconductors, radio devices,
and opto semiconductors. Among these, opto semiconductors are being adopted
largely, as they absorb and emit light. Photodiodes, LEDs, solar cells, and
semiconductor lasers are all categorized as opto semiconductors. Furthermore,
based on end-use industry, the global GaN semiconductor devices market has been
classified into information & communication technology, automotive,
consumer electronics, aerospace & defense, and others. The consumer
electronics sector is increasingly adopting GaN semiconductor devices, as GaN
is widely incorporated into radio frequency devices, light-emitting diodes
(LEDs), and power electronics, due to its ability to operate at a high
frequency and high temperature. This, in turn, is expected to boost the global
GaN semiconductor devices market during the forecast period.
GaN Semiconductor Devices Market: Dynamics
Improved responsiveness and enhanced battlefield performance
are important areas of focus for the defense sector. Hence, a high level of
integration is required between radar communication systems and electronic
warfare devices that are used in military. Due to high breakdown voltage and rapid
heat dissipation capacity, GaN semiconductor devices have benefitted the
defense industry greatly. A major application of GaN in the military sector is
its usage in HEMTs (high electron mobility transistors), which are required for
high-frequency operations. Furthermore, due to high temperature resistivity,
low power consumption, high breakdown voltage, better thermal stability, and
high electron mobility, GaN semiconductor devices are widely acknowledged as
‘green technology’ by different industrial sectors. These devices are largely
used in light-emitting diodes (LEDs), radio frequency (RF) amplifiers, and
power electronics, due to their unique properties. With rapid advancements in
technology, usage of GaN is expected to be extended to various other commercial
applications. Additionally, advancements intended to increase wafer diameters
are expected to improve the efficiency and reduce the cost of GaN devices,
eventually improving the performance of these devices and making GaN more
acceptable compared to other semiconductor materials. These are expected to be
prominent factors propelling the global GaN semiconductor devices market during
the forecast period.
GaN Semiconductor Devices Market: Prominent Regions
Asia Pacific is a dominant region of the global GaN
semiconductor devices market. Growth of the market in the region can be
attributed to presence of a large number of GaN raw material suppliers in the
region. A majority of market players in this region are located in Japan, South
Korea, and China. The lower production and labor costs in these countries are
aiding manufacturers to set up their production facilities. Additionally, the
GaN semiconductor devices market in Asia Pacific is primarily driven by the
increasing demand from the consumer electronics sector, most importantly from
mobile, communication, and computing segments of the sector. The electronics
industry in countries such as China and India is expanding at a rapid pace.
Hence, these countries are expected to be potential markets for GaN
semiconductor devices in the near future. In addition, China is planning to
adopt LED and solid-state lighting technologies as well as radio frequency
devices in the next few years. Thus, owing to growing economy and significant
availability of skilled labor and raw materials, several companies are looking
forward to shifting their manufacturing units to Asia Pacific. Considering all
the above-mentioned factors, the GaN semiconductor devices market in Asia
Pacific is expected to witness steady growth between 2019 and 2027.
The market in North America and Europe is estimated to witness significant
growth during the forecast period, due to wide utilization of GaN-based
transistors in defense & military and consumer electronics sectors in these
regions. The GaN semiconductor devices market in Middle East & Africa and
South America is expected to witness moderate growth in the near future.
GaN Semiconductor Devices Market: Key Players
Key players operating in the global GaN semiconductor
devices market are Cree, Inc., Efficient Power Conversion Corporation,
FUJITSU, GaN Systems, NICHIA CORPORATION, NXP Semiconductors, Renesas
Electronics Corporation, Toshiba Corporation, Texas Instruments Incorporated,
and Transphorm Inc.
Global GaN Semiconductor Devices Market: Segmentation
GaN Semiconductor Devices Market, by Product
- Power
Semiconductors
- Radio
Devices
- Opto
Semiconductors
GaN Semiconductor Devices Market, by Component
- Diodes
- Transistors
- Integrated
Circuits (ICs)
- Others
GaN Semiconductor Devices Market, by Wafer Size
- 2
Inch
- 4
Inch
- 6
Inch
- 8
Inch
GaN Semiconductor Devices Market, by End-use Industry
- Information
& Communication Technology
- Automotive
- Consumer
Electronics
- Aerospace
& Defense
- Others
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