Key Points Covered in the Silicon Carbide Epitaxial Wafer Market Study
Pre-shipment Inspection: Introduction
- Silicon
carbide epitaxial wafers are made by placing multi-micrometer thick single
silicon carbide crystal layers on top of a polished wafer. Precise control
of thickness, doping, and defect density is needed to manufacture high
yielding power devices from a semiconductor fabrication facility.
- Silicon
carbide-based devices are widely utilized for short-wavelength
optoelectronic, radiation-resistant, and high-temperature applications.
SiC wafers have been majorly used by small and large semiconductor device
manufacturing companies as well as research labs across the world.
- Increase
in demand for advanced semiconductors and rise in innovative end-user
applications are major factors boosting the global
silicon carbide epitaxial wafer market
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Rise in Demand for 200mm Segment
- The
200mm segment of the global silicon carbide epitaxial wafer market is
projected to expand at a rapid pace during the forecast period
- Exponential
use of 200mm wafers in LED applications due to the greater yield offered
by these wafers is propelling the silicon carbide epitaxial wafer market
across the world. Additionally, an increase in number of operational 200mm
wafer fabrication facilities is expected to significantly drive the demand
for 200mm wafers.
- The
cost benefits associated with reclaiming the 200mm wafer are expected to
drive the 200 mm segment during the forecast period. These factors
increase the adoption of silicon carbide epitaxial wafer services
worldwide.
- However,
delay of investment plans for capacity expansion by wafer manufacturers
due to COVID-19 is a major factor that is estimated to restrain the global
silicon carbide epitaxial wafer market during the forecast period
Asia Pacific to Lead Global Silicon Carbide Epitaxial
Wafer Market
- In
terms of region, the global silicon carbide epitaxial wafer market can be
divided into North America, Europe, Asia Pacific, Middle East &
Africa, and South America
- Asia
Pacific is anticipated to dominate the global silicon carbide epitaxial
wafer market during the forecast period due to an increase in disposable
income coupled with an increase in population that has resulted in a rise
in the demand for electronics, and alternative renewable sources of
energy, which in turn is estimated to fuel the electronics industry in the
region.
- The market
in the region is expected to expand further due to rapid expansion of
electronics industry in China, Thailand, India, South Korea, and Taiwan
- Expansion
of the electronics industry is due to technological advancement coupled
with low labor costs in Taiwan and Japan, which in turn is projected to
propel the market in the region
- The
silicon carbide epitaxial wafer market in Europe is estimated to expand at
a substantial rate during the forecast period since a large number of
manufactures such as Siltronic AG (Germany), STMicroelectronics, and
SweGaN AB operate in the region
- On
the other hand, the silicon carbide epitaxial wafer market in North
America, Middle East & Africa, and South America is estimated to
expand at a moderate pace during the forecast period
Key Players Operating in Global Silicon Carbide Epitaxial
Wafer Market
Key players operating in the global market are focusing on
technological advancements and expansion to cater to the rising demand for
pre-shipment inspections. Moreover, market players are emphasizing on strategic
initiatives to enhance business and establish their manufacturing facilities.
Key players operating
in the global silicon carbide epitaxial wafer market include:
Siltronic AG, SweGaN AB, GlobalWafer Japan CO.Ltd., DongGuan
TIAN YU Semiconductor Technology Co., Ltd., STMicroelectronics, Rohm
Semiconductor, SK Siltron, Epiworld International, Showa Denko K. K., II-VI
Incorporated, Cree, Inc.
Global Silicon Carbide Epitaxial Wafer Market: Research
Scope
Global Silicon Carbide Epitaxial Wafer Market, by Type
- 100mm
- 150mm
- 200mm
Global Silicon Carbide Epitaxial Wafer Market, by
Application
- 600-1200V
SiC Devices
- 1200-3300V
SiC Devices
- Above
3300V SiC Devices
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